AMD R5316G1609U2K 8GB vs Micron Technology 4ATF51264HZ-3G2J1 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Micron Technology 4ATF51264HZ-3G2J1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-3G2J1 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 73

左右 -74% 更低的延时
更快的读取速度，GB/s

15.7 6.3

测试中的平均数值
更快的写入速度，GB/s

12.4 5.2

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 42
读取速度，GB/s

6.3 15.7
写入速度，GB/s

5.2 12.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1309 2352

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston 9905624-045.A00G 8GB

Kingston 9905624-045.A00G 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CM4B16G7L2666A16K2-O 16GB

Corsair CM4B16G7L2666A16K2-O 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Colorful Technology Ltd BAPC08G2666D4S8 8GB

Colorful Technology Ltd BAPC08G2666D4S8 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB