AMD R5316G1609U2K 8GB vs Mushkin MR[A/B]4U266GHHF8G 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Mushkin MR[A/B]4U266GHHF8G 8GB

需要考虑的原因
Mushkin MR[A/B]4U266GHHF8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 73

左右 -152% 更低的延时
更快的读取速度，GB/s

17.4 6.3

测试中的平均数值
更快的写入速度，GB/s

12.8 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 29
读取速度，GB/s

6.3 17.4
写入速度，GB/s

5.2 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 3113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G3A3 16GB

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Corsair CMD8GX3M2A3000C12 4GB

INTENSO M418039 8GB

INTENSO M418039 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-4600C18-8GTRS 8GB

G Skill Intl F4-4600C18-8GTRS 8GB

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Samsung M471B5173DB0-YK0 4GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB