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AMD R538G1601U2S 8GB
Samsung M378A5244CB0-CVF 4GB
比较
AMD R538G1601U2S 8GB vs Samsung M378A5244CB0-CVF 4GB
总分
AMD R538G1601U2S 8GB
总分
Samsung M378A5244CB0-CVF 4GB
差异
规格
评论
差异
需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
30
左右 37% 更低的延时
更快的读取速度,GB/s
18.4
16
测试中的平均数值
需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
更高的内存带宽,mbps
23400
12800
左右 1.83 更高的带宽
规格
完整的技术规格清单
AMD R538G1601U2S 8GB
Samsung M378A5244CB0-CVF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
19
30
读取速度,GB/s
18.4
16.0
写入速度,GB/s
12.3
12.3
内存带宽,mbps
12800
23400
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)
3189
2709
AMD R538G1601U2S 8GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB
Samsung M378A5244CB0-CVF 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Corsair CMW32GX4M4C3466C16 8GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Jinyu CL16-16-16 D4-2400 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK64GX4M4E3200C16 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston HP26D4S9S8MHF-8 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
V-GEN D4R8GL24A8R 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
报告一个错误
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Bug description
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