AMD R5316G1609U2K 8GB vs SK Hynix HMA81GR7MFR8N-UH 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

SK Hynix HMA81GR7MFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7MFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

56 73

左右 -30% 更低的延时
更快的读取速度，GB/s

9.5 6.3

测试中的平均数值
更快的写入速度，GB/s

7.2 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 56
读取速度，GB/s

6.3 9.5
写入速度，GB/s

5.2 7.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3333C16-8GTZSK 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

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G Skill Intl F4-2400C15-8GRB 8GB

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Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-2400C15-8GTZR 8GB

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AMD R538G1601U2S-UO 8GB

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Kingston KF3733C19D4/16GX 16GB

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology BLS4G4D26BFSB.8FB 4GB

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Mushkin MRA4S266GHHF32G 32GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Kingston KF3600C17D4/8GX 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

V-Color Technology Inc. TL48G32S8RRGB16 8GB

V-Color Technology Inc. TL48G32S8RRGB16 8GB

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INTENSO 5641162 8GB

INTENSO 5641162 8GB

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Qimonda 64T128020EDL2.5C2 1GB

Kingston 9905624-025.A00G 8GB

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