Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3333C16-8GTZSK 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20

测试中的平均数值
更快的写入速度，GB/s

2,622.0 17.1

测试中的平均数值

G Skill Intl F4-3333C16-8GTZSK 8GB

需要考虑的原因
G Skill Intl F4-3333C16-8GTZSK 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 77

左右 -285% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3333C16-8GTZSK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 20
读取速度，GB/s

3,405.2 20.0
写入速度，GB/s

2,622.0 17.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Crucial Technology CT4G4DFS8213.M8FA 4GB

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SK Hynix HMA41GR7MFR8N-TFT1 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Teikon TMA41GU6AFR8N-TFSC 8GB

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Kingston KHX2400C11D3/4GX 4GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB