AMD R534G1601U1S-UO 4GB vs AMD R5S38G1601U2S 8GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

更快的读取速度，GB/s

15.4 14.7

测试中的平均数值

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

AMD R5S38G1601U2S 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 37
读取速度，GB/s

14.7 15.4
写入速度，GB/s

9.2 9.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2272 2581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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G Skill Intl F4-2666C15-4GRR 4GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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G Skill Intl F4-3733C17-4GVK 4GB

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Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Kingston KHX3000C16D4/32GX 32GB

Kingston KHX3000C16D4/32GX 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston 9905701-032.A00G 16GB

Kingston 9905701-032.A00G 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB