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AMD R534G1601U1S-UO 4GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB

AMD R534G1601U1S-UO 4GB vs Crucial Technology BL8G32C16U4B.M8FE1 8GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
Crucial Technology BL8G32C16U4B.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.3 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    14.7 left arrow 18.3
  • 写入速度，GB/s
    9.2 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 3442

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Micron Technology 18ASF2G72AZ-2G6D1 16GB
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G Skill Intl F3-2800C12-8GTXDG 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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Panram International Corporation PUD42133C154G2VS 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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