AMD R534G1601U1S-UO 4GB vs G Skill Intl F4-2400C17-16GIS 16GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

G Skill Intl F4-2400C17-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB

报告一个错误

更快的读取速度，GB/s

16.7 14.7

测试中的平均数值
更快的写入速度，GB/s

9.8 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

G Skill Intl F4-2400C17-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

14.7 16.7
写入速度，GB/s

9.2 9.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2272 2888

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA81GU6DJR8N-VK 8GB

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Kingston KP4T2F-PSB 4GB

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UMAX Technology 16GB

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AMD R534G1601U1S-UO 4GB

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G Skill Intl F4-2400C17-16GIS 16GB

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Samsung M393B2G70BH0-CH9 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

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Essencore Limited 8GBF1X08QFHH38-135-K 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Corsair CMR32GX4M2C3333C16 16GB