AMD R534G1601U1S-UO 4GB vs G Skill Intl F4-4000C18-8GVK 8GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

G Skill Intl F4-4000C18-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GVK 8GB

报告一个错误

更快的读取速度，GB/s

17.5 14.7

测试中的平均数值
更快的写入速度，GB/s

15.2 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

G Skill Intl F4-4000C18-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

14.7 17.5
写入速度，GB/s

9.2 15.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 3469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905471-002.A00LF 2GB

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Corsair CM3X2GSD1066 2GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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AMD R748G2400U2S 8GB

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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston 99U5663-001.A00G 16GB

Kingston 99U5663-001.A00G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3466C16-8GTZ 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Samsung 1600 CL10 Series 8GB

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Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB