AMD R534G1601U1S-UO 4GB vs Kingston 9905663-006.A00G 16GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

更快的读取速度，GB/s

14.7 12.4

测试中的平均数值
更快的写入速度，GB/s

9.2 6.8

测试中的平均数值

Kingston 9905663-006.A00G 16GB

需要考虑的原因
Kingston 9905663-006.A00G 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Kingston 9905663-006.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

14.7 12.4
写入速度，GB/s

9.2 6.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2272 2067

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston 9905624-044.A00G 8GB

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Corsair CMSX64GX4M2A2666C18 32GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-3200C15-16GTZ 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

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Corsair VSA2GSDS667C4 2GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

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Samsung M393B1G70QH0-YK0 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB