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AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB

AMD R534G1601U1S-UO 4GB vs Micron Technology 8ATF1G64HZ-3G2R1 8GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 51
    左右 47% 更低的延时
Micron Technology 8ATF1G64HZ-3G2R1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2R1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 51
  • 读取速度，GB/s
    14.7 left arrow 15.8
  • 写入速度，GB/s
    9.2 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 2570

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMR16GX4M2C3466C16 8GB
Corsair CMR16GX4M2C3466C16 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905624-022.A00G 8GB
Kingston 9905624-022.A00G 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Kingston HP32D4U8S8HD-8X 8GB
Kingston HP32D4U8S8HD-8X 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston XRMWRN-MIE 16GB
Kingston XRMWRN-MIE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
内存RAM