Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 16ATF2G64AZ-2G3A1 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时
更快的读取速度，GB/s

16.7 14.7

测试中的平均数值
更快的写入速度，GB/s

11.8 10.6

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Micron Technology 16ATF2G64AZ-2G3A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3A1 16GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

16.7 14.7
写入速度，GB/s

11.8 10.6
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2998

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

A-DATA Technology AM2P32NC8W1-BCFS 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.01G9O.9LC 1GB

Apacer Technology 78.01G9O.9LC 1GB

Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB