AMD R534G1601U1S-UO 4GB vs Ramaxel Technology RMSA3260MH78H8H-2666 8GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

更快的读取速度，GB/s

14.7 13.6

测试中的平均数值
更快的写入速度，GB/s

9.2 6.9

测试中的平均数值

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

需要考虑的原因
Ramaxel Technology RMSA3260MH78H8H-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

14.7 13.6
写入速度，GB/s

9.2 6.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2272 2120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R534G1601U1S-UO 4GB

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Kingston 9905403-500.A01LF 8GB

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Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905734-022.A00G 16GB

Kingston 9905734-022.A00G 16GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Corsair CMW64GX4M2D3600C18 32GB

Corsair CMW64GX4M2D3600C18 32GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston KHX2666C13/16GX 16GB

Kingston KHX2666C13/16GX 16GB