Samsung M4 70T5663QZ3-CE6 2GB vs Corsair CMW64GX4M2D3600C18 32GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Corsair CMW64GX4M2D3600C18 32GB

Corsair CMW64GX4M2D3600C18 32GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值

Corsair CMW64GX4M2D3600C18 32GB

需要考虑的原因
Corsair CMW64GX4M2D3600C18 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 68

左右 -127% 更低的延时
更快的写入速度，GB/s

15.0 1,702.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Corsair CMW64GX4M2D3600C18 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 30
读取速度，GB/s

3,886.6 17.0
写入速度，GB/s

1,702.6 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

654 3690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston 9905403-447.A00LF 4GB

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Kingston 9965525-140.A00LF 8GB

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Samsung M471B5173QH0-YK0 4GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston CBD24D4S7D8ME-16 16GB

Kingston CBD24D4S7D8ME-16 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240