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Samsung M4 70T5663QZ3-CE6 2GB
Corsair CMW64GX4M2D3600C18 32GB

Samsung M4 70T5663QZ3-CE6 2GB vs Corsair CMW64GX4M2D3600C18 32GB

总分
star star star star star
Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分
star star star star star
Corsair CMW64GX4M2D3600C18 32GB

Corsair CMW64GX4M2D3600C18 32GB

差异 规格 评论

差异

Samsung M4 70T5663QZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17
    测试中的平均数值
Corsair CMW64GX4M2D3600C18 32GB 需要考虑的原因
Corsair CMW64GX4M2D3600C18 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 68
    左右 -127% 更低的延时
  • 更快的写入速度，GB/s
    15.0 left arrow 1,702.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663QZ3-CE6 2GB
Corsair CMW64GX4M2D3600C18 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 30
  • 读取速度，GB/s
    3,886.6 left arrow 17.0
  • 写入速度，GB/s
    1,702.6 left arrow 15.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    654 left arrow 3690

Samsung M4 70T5663QZ3-CE6 2GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Corsair CMW64GX4M2D3600C18 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Kingston 9905598-039.A00G 16GB
Kingston 9905598-039.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Corsair CMSO8GX4M1A2133C15 8GB
Corsair CMSO8GX4M1A2133C15 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston ACR26D4U9S8ME-8 8GB
Kingston ACR26D4U9S8ME-8 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Avant Technology W642GU42J9266N8 16GB
Avant Technology W642GU42J9266N8 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-4266C17-8GTZR 8GB
G Skill Intl F4-4266C17-8GTZR 8GB
内存RAM