AMD R538G1601U2S 8GB vs AMD R538G1601S2LS 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 28

左右 32% 更低的延时
更快的读取速度，GB/s

18.4 11.3

测试中的平均数值
更快的写入速度，GB/s

12.3 8.2

测试中的平均数值

AMD R538G1601S2LS 8GB

需要考虑的原因
AMD R538G1601S2LS 8GB

报告一个错误

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

AMD R538G1601S2LS 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

19 28
读取速度，GB/s

18.4 11.3
写入速度，GB/s

12.3 8.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

3189 1793

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G32C16S4B.8FB 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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G Skill Intl F4-2133C15-16GFT 16GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3600C17-8GTZ 8GB

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Golden Empire CL16-16-16 D4-3200 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.CAGSZ.4070B 8GB

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AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

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Crucial Technology CT8G4DFRA32A.M4FF 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F4-3200C16-16GSXWB 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB