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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
比较
AMD R538G1601U2S 8GB vs AMD R538G1601U2S 8GB
总分
AMD R538G1601U2S 8GB
总分
AMD R538G1601U2S 8GB
差异
规格
评论
差异
需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
规格
完整的技术规格清单
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
19
19
读取速度,GB/s
18.4
18.4
写入速度,GB/s
12.3
12.3
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
3189
3189
AMD R538G1601U2S 8GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB
AMD R538G1601U2S 8GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XJV223-MIE 16GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2133C15-4GNT 4GB
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Kingston 99U5584-010.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Kingston 9905403-090.A01LF 4GB
Corsair CM4X16GD3200C16K4E 16GB
Samsung M378A5244CB0-CTD 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2400C17-4GFX 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston XJ69DF-MIE2 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMR32GX4M4D3200C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C16-4GRB 4GB
报告一个错误
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Bug description
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