AMD R538G1601U2S 8GB vs Corsair CMT16GX4M2C3200C14 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 35

左右 46% 更低的延时
更快的读取速度，GB/s

18.4 17

测试中的平均数值
更快的写入速度，GB/s

12.3 11.5

测试中的平均数值

Corsair CMT16GX4M2C3200C14 8GB

需要考虑的原因
Corsair CMT16GX4M2C3200C14 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Corsair CMT16GX4M2C3200C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 35
读取速度，GB/s

18.4 17.0
写入速度，GB/s

12.3 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3189 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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PNY Electronics PNY 2GB

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Crucial Technology CT4G4DFS8266.C8FB 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Samsung M471B5273DH0-YK0 4GB

Nanya Technology NT4GC64B8HB0NF-CG 4GB

Nanya Technology NT4GC64B8HB0NF-CG 4GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C16-16GVKA 16GB

G Skill Intl F4-3200C16-16GVKA 16GB