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AMD R538G1601U2S 8GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB

AMD R538G1601U2S 8GB vs Crucial Technology BLS16G4D240FSE.16FBR 16GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 45
    左右 58% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 12.2
    测试中的平均数值
Crucial Technology BLS16G4D240FSE.16FBR 16GB 需要考虑的原因
Crucial Technology BLS16G4D240FSE.16FBR 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 45
  • 读取速度，GB/s
    18.4 left arrow 13.2
  • 写入速度，GB/s
    12.3 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 2841

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK16GX4M2Z3600C20 8GB
Corsair CMK16GX4M2Z3600C20 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Smart Modular SMS4WEC8C1K0446FCG 8GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C14-8GTZKO 8GB
G Skill Intl F4-3200C14-8GTZKO 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
UMAX Technology 16GB
UMAX Technology 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM