AMD R538G1601U2S 8GB vs Crucial Technology CT8G4DFS824A.M8FR 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 32

左右 41% 更低的延时
更快的读取速度，GB/s

18.4 15.6

测试中的平均数值

Crucial Technology CT8G4DFS824A.M8FR 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FR 8GB

报告一个错误

更快的写入速度，GB/s

13.1 12.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 32
读取速度，GB/s

18.4 15.6
写入速度，GB/s

12.3 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3189 2949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-2800C16-4GRK 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK128GX4M8B3333C16 16GB

Corsair CMK128GX4M8B3333C16 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

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A-DATA Technology VDQVE1B16 2GB

Hypertec G2RT-4AFT00 16GB

Hypertec G2RT-4AFT00 16GB