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AMD R538G1601U2S 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB

AMD R538G1601U2S 8GB vs Crucial Technology CT8G4DFS8266.M8FH 8GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 35
    左右 46% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 16.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 12.2
    测试中的平均数值
Crucial Technology CT8G4DFS8266.M8FH 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FH 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 35
  • 读取速度，GB/s
    18.4 left arrow 16.3
  • 写入速度，GB/s
    12.3 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 2893

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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内存RAM
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内存RAM
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内存RAM
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Micron Technology 8ATF1G64HZ-3G2E1 8GB
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内存RAM
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内存RAM
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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
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