AMD R538G1601U2S 8GB vs G Skill Intl F4-2400C15-4GNT 4GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 37

左右 49% 更低的延时
更快的读取速度，GB/s

18.4 15.1

测试中的平均数值
更快的写入速度，GB/s

12.3 11.2

测试中的平均数值

G Skill Intl F4-2400C15-4GNT 4GB

需要考虑的原因
G Skill Intl F4-2400C15-4GNT 4GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

G Skill Intl F4-2400C15-4GNT 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 37
读取速度，GB/s

18.4 15.1
写入速度，GB/s

12.3 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3189 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited IM44GU48A30-FGGHAB 4GB

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Kingston 9905428-401.A00LF 8GB

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Crucial Technology BL32G32C16U4WL.M16FB 32GB

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Samsung M378A4G43MB1-CTD 32GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-2400C15-4GRR 4GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

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Kingston KHX1600C9D3/4G 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB