AMD R538G1601U2S 8GB vs G Skill Intl F4-2400C15-8GVR 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

G Skill Intl F4-2400C15-8GVR 8GB

G Skill Intl F4-2400C15-8GVR 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 32

左右 41% 更低的延时
更快的读取速度，GB/s

18.4 16.4

测试中的平均数值
更快的写入速度，GB/s

12.3 11.9

测试中的平均数值

G Skill Intl F4-2400C15-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GVR 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

G Skill Intl F4-2400C15-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 32
读取速度，GB/s

18.4 16.4
写入速度，GB/s

12.3 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3189 2973

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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A Force Manufacturing Ltd. UD-01G64V2133P 8GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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AMD R538G1601U2S 8GB

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G Skill Intl F4-2400C15-8GVR 8GB

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PNY Electronics PNY 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT16G4SFS832A.M8FE 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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Essencore Limited KD4AGS88C-26N1900 16GB

Essencore Limited KD4AGS88C-26N1900 16GB

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Samsung M391B5673EH1-CH9 2GB

Corsair CMSX32GX4M2A3000C16 16GB

Corsair CMSX32GX4M2A3000C16 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Kingston 9905630-066.A00G 16GB

Kingston 9905630-066.A00G 16GB