AMD R538G1601U2S 8GB vs Kingston 9965600-005.A01G 16GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 29

左右 34% 更低的延时
更快的读取速度，GB/s

18.4 13.9

测试中的平均数值
更快的写入速度，GB/s

12.3 8.8

测试中的平均数值

Kingston 9965600-005.A01G 16GB

需要考虑的原因
Kingston 9965600-005.A01G 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Kingston 9965600-005.A01G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 29
读取速度，GB/s

18.4 13.9
写入速度，GB/s

12.3 8.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3189 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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AMD R538G1601U2S-UO 8GB

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SK Hynix HMA81GS6CJRJR-VK 8GB

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Kingston 99U5474-010.A00LF 2GB

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Kingston 9905678-044.A00G 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3000C16-8GTZN 8GB

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A-DATA Technology DDR3 1600 4GB

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Micron Technology 16ATF4G64AZ-3G2B1 32GB

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Samsung M471A5644EB0-CPB 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Kingston KST-2133MHZ-4G 4GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SK Hynix HMA82GS6MFR8N-TF 16GB

SK Hynix HMA82GS6MFR8N-TF 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB