RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD R538G1601U2S 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
比较
AMD R538G1601U2S 8GB vs Smart Modular SF4641G8CK8I6GKSEG 8GB
总分
AMD R538G1601U2S 8GB
总分
Smart Modular SF4641G8CK8I6GKSEG 8GB
差异
规格
评论
差异
需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
31
左右 39% 更低的延时
更快的读取速度,GB/s
18.4
16.7
测试中的平均数值
需要考虑的原因
Smart Modular SF4641G8CK8I6GKSEG 8GB
报告一个错误
更快的写入速度,GB/s
13.4
12.3
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
AMD R538G1601U2S 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
19
31
读取速度,GB/s
18.4
16.7
写入速度,GB/s
12.3
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3189
3008
AMD R538G1601U2S 8GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B5170FH0-CK0 4GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C17-4GIS 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Essencore Limited KD4AGU880-36A180X 16GB
AMD R538G1601U2S 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3600C16-8GTZKW 8GB
Kingston ACR512X64D3S13C9G 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMK16GX4M2B3600C18 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905700-053.A00G 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C15-16GTZKY 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMAA4GS6AJR8N-VK 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Kingston 9965525-018.A00LF 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
报告一个错误
×
Bug description
Source link