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AMD R538G1601U2S 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

AMD R538G1601U2S 8GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 29
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 18.2
    测试中的平均数值
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
报告一个错误
  • 更快的写入速度，GB/s
    15.9 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 29
  • 读取速度，GB/s
    18.4 left arrow 18.2
  • 写入速度，GB/s
    12.3 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 3866

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M391A1G43DB0-CPB 8GB
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内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
AMD R534G1601U1S-UO 4GB
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Kingston 9905403-090.A01LF 4GB
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内存RAM
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Kingston 9905316-106.A02LF 1GB
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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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AMD R9S48G3206U2S 8GB
内存RAM
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Kingston 9905678-041.A00G 4GB
内存RAM
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SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2400C17-4GNT 4GB
G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
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Crucial Technology BLS8G4S240FSDK.8FD 8GB
内存RAM
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Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Apacer Technology 78.BAGN8.40C0B 4GB
Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM