AMD R538G1601U2S 8GB vs Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 63

左右 70% 更低的延时
更快的读取速度，GB/s

18.4 16.1

测试中的平均数值
更快的写入速度，GB/s

12.3 9.1

测试中的平均数值

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 63
读取速度，GB/s

18.4 16.1
写入速度，GB/s

12.3 9.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3189 1932

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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最新比较

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMK16GX4M2B3333C16 8GB

Corsair CMK16GX4M2B3333C16 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Apacer Technology GD2.1527WE.001 8GB

Apacer Technology GD2.1527WE.001 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston KF2666C15S4/16G 16GB

Kingston KF2666C15S4/16G 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9965604-001.D00G 16GB

Kingston 9965604-001.D00G 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

Crucial Technology BLS4G4D240FSB.M8FADG 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB