AMD R538G1601U2S-UO 8GB vs Corsair CMR16GX4M2F4000C19 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Corsair CMR16GX4M2F4000C19 8GB

Corsair CMR16GX4M2F4000C19 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

Corsair CMR16GX4M2F4000C19 8GB

需要考虑的原因
Corsair CMR16GX4M2F4000C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

18.1 14.2

测试中的平均数值
更快的写入速度，GB/s

15.6 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Corsair CMR16GX4M2F4000C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

14.2 18.1
写入速度，GB/s

10.0 15.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2634 3663

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Crucial Technology CT4G4DFS8213.M8FB 4GB

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Samsung M393B5170FH0-CH9 4GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Samsung M378A1K43CB2-CRC 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB