AMD R538G1601U2S-UO 8GB vs Crucial Technology BLS8G4D240FSB.16FBD 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Crucial Technology BLS8G4D240FSB.16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSB.16FBD 8GB

报告一个错误

更快的读取速度，GB/s

17.8 14.2

测试中的平均数值
更快的写入速度，GB/s

13.2 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

14.2 17.8
写入速度，GB/s

10.0 13.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2634 3126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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SK Hynix HMA81GS6MFR8N-UH 8GB

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Samsung M391B5673EH1-CH9 2GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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Samsung M393B2G70BH0-CK0 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

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Samsung M393B2G70BH0-YK0 16GB

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G Skill Intl F4-3000C15-8GRRB 8GB

SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB