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Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB

Samsung M391B5673EH1-CH9 2GB vs Micron Technology 16ATF2G64AZ-3G2E1 16GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 28% 更低的延时
Micron Technology 16ATF2G64AZ-3G2E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-3G2E1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.6 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 36
  • 读取速度，GB/s
    12.8 left arrow 18.6
  • 写入速度，GB/s
    9.0 left arrow 15.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3372

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3600C19-16GSXWB 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kllisre 8GB
Kllisre 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA82GU6MFR8N-TF 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
内存RAM
Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMW128GX4M4E3200C16 32GB
Corsair CMW128GX4M4E3200C16 32GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
G Skill Intl F4-3200C16-8GFX 8GB
G Skill Intl F4-3200C16-8GFX 8GB
内存RAM