AMD R538G1601U2S-UO 8GB vs G Skill Intl F4-3600C14-8GTZNB 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

G Skill Intl F4-3600C14-8GTZNB 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZNB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

19.6 14.2

测试中的平均数值
更快的写入速度，GB/s

17.3 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

14.2 19.6
写入速度，GB/s

10.0 17.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2634 3879

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386A4G40DM0-CPB 32GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Crucial Technology BLS8G4D26BFSTK.8FD 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB

A-DATA Technology DQVE1B16 2GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

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Samsung M393A2K40CB1-CRC 16GB

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Samsung M471B5173QH0-YK0 4GB

Corsair CMT16GX4M2K4000C19 8GB

Corsair CMT16GX4M2K4000C19 8GB