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AMD R538G1601U2S-UO 8GB
Kingston HP32D4U8S8HC-8XR 8GB

AMD R538G1601U2S-UO 8GB vs Kingston HP32D4U8S8HC-8XR 8GB

总分
star star star star star
AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分
star star star star star
Kingston HP32D4U8S8HC-8XR 8GB

Kingston HP32D4U8S8HC-8XR 8GB

差异 规格 评论

差异

AMD R538G1601U2S-UO 8GB 需要考虑的原因
AMD R538G1601U2S-UO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 29
    左右 10% 更低的延时
Kingston HP32D4U8S8HC-8XR 8GB 需要考虑的原因
Kingston HP32D4U8S8HC-8XR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S-UO 8GB
Kingston HP32D4U8S8HC-8XR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 29
  • 读取速度，GB/s
    14.2 left arrow 16.9
  • 写入速度，GB/s
    10.0 left arrow 15.1
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2634 left arrow 3467

AMD R538G1601U2S-UO 8GB RAM的比较

Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-4GRK 4GB

Kingston HP32D4U8S8HC-8XR 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMD16GX4M2K4133C19 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 4133 2OZ 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
内存RAM
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston HP32D4U8S8HC-8XR 8GB
Kingston HP32D4U8S8HC-8XR 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2133C15-16GFXR 16GB
G Skill Intl F4-2133C15-16GFXR 16GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
G Skill Intl F3-1600C10-8GAO 8GB
G Skill Intl F3-1600C10-8GAO 8GB
Patriot Memory (PDP Systems) 1866 CL10 Series 8GB
Patriot Memory (PDP Systems) 1866 CL10 Series 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM