AMD R538G1601U2S-UO 8GB vs Kingston KV0M5R-HYD 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 48

左右 46% 更低的延时
更快的读取速度，GB/s

14.2 13.3

测试中的平均数值
更快的写入速度，GB/s

10.0 8.5

测试中的平均数值

Kingston KV0M5R-HYD 8GB

需要考虑的原因
Kingston KV0M5R-HYD 8GB

报告一个错误

更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Kingston KV0M5R-HYD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 48
读取速度，GB/s

14.2 13.3
写入速度，GB/s

10.0 8.5
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2634 2398

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology DDR4 2400 2OZ 8GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 99U5584-005.A00LF 4GB

Kingston KF2666C13D4/8GX 8GB

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Samsung M471B5673FH0-CF8 2GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3733C17-16GTZKK 16GB

G Skill Intl F4-3733C17-16GTZKK 16GB