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AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB

AMD R538G1601U2S-UO 8GB vs Patriot Memory (PDP Systems) 3600 C16 Series 8GB

总分
star star star star star
AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C16 Series 8GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

差异 规格 评论

差异

AMD R538G1601U2S-UO 8GB 需要考虑的原因
AMD R538G1601U2S-UO 8GB
报告一个错误
Patriot Memory (PDP Systems) 3600 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    20.6 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 24
  • 读取速度，GB/s
    14.2 left arrow 20.6
  • 写入速度，GB/s
    10.0 left arrow 16.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2634 left arrow 3870

AMD R538G1601U2S-UO 8GB RAM的比较

Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-4GRK 4GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Gloway International (HK) STK2133C15-8GB 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMT128GX4M8X3600C18 16GB
Corsair CMT128GX4M8X3600C18 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston 9905734-063.A00G 32GB
Kingston 9905734-063.A00G 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Mushkin 99[2/7/4]199[F/T] 8GB
Mushkin 99[2/7/4]199[F/T] 8GB
内存RAM