AMD R538G1601U2S-UO 8GB vs Samsung M378A1G43DB0-CPB 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

更快的读取速度，GB/s

15 14.2

测试中的平均数值
更快的写入速度，GB/s

10.3 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Samsung M378A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

14.2 15.0
写入速度，GB/s

10.0 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2634 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW128GX4M4D3000C16 32GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Micron Technology 8ATF1G64HZ-2G3A1 8GB

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PNY Electronics PNY 2GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston KHX2933C17D4/16G 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Avant Technology J644GU44J2320NF 32GB

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Essencore Limited IM44GU48N26-GIIHA0 4GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Corsair CMR16GX4M2C3000C15 8GB

Corsair CMR16GX4M2C3000C15 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Kingston 9905625-065.A00G 16GB

Kingston 9905625-065.A00G 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB