AMD R538G1601U2S-UO 8GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

报告一个错误

更快的读取速度，GB/s

18.7 14.2

测试中的平均数值
更快的写入速度，GB/s

17.8 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

14.2 18.7
写入速度，GB/s

10.0 17.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2634 3963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Kingston 99U5469-045.A00LF 4GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMD16GX3M2A1866C9 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

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A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB