AMD R538G1601U2S-UO 8GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

报告一个错误

更快的读取速度，GB/s

18.7 14.2

测试中的平均数值
更快的写入速度，GB/s

17.8 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

14.2 18.7
写入速度，GB/s

10.0 17.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2634 3963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43BB1-CTD 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston KHX2133C11D3/4GX 4GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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G Skill Intl F4-2400C17-16GSXF 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CM4B8G1J2800K14K 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB