Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

18.7 13.7

测试中的平均数值
更快的写入速度，GB/s

17.8 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

13.7 18.7
写入速度，GB/s

9.6 17.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2312 3963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMG32GX4M2D3600C18 16GB

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Corsair CMH32GX4M2D3600C18 16GB

Strontium EVMT8G1600U86S 8GB

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G Skill Intl F4-2666C19-8GIS 8GB

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Panram International Corporation PUD43000C154G4NJW 4GB

Panram International Corporation PUD43000C154G4NJW 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB