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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Chun Well Technology Holding Limited D4U0826190B 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
更快的写入速度,GB/s
12.9
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
16.7
16.7
写入速度,GB/s
11.8
12.9
内存带宽,mbps
21300
21300
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2756
3273
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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