RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Chun Well Technology Holding Limited D4U0826190B 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
更快的读取速度,GB/s
16.7
16
测试中的平均数值
更快的写入速度,GB/s
12.9
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
16.0
16.7
写入速度,GB/s
12.5
12.9
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3273
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited D4U0826190B 8GB
AMD AE34G1601U1 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Kingston 9905403-011.A03LF 2GB
Kingston ACR26D4S9S1ME-4 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M393A5143DB0-CRC 4GB
SK Hynix HYMP112S64CP6-S6 1GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C18-8GTZRB 8GB
A-DATA Technology DDR4 2400 16GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M47472K43DB1-CTD 16GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston 9905625-139.A00G 16GB
Crucial Technology CT2K102464BD160B 8GB
EVGA 8GX-D4-3200-MR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905712-035.A00G 16GB
报告一个错误
×
Bug description
Source link