Samsung M471B5273EB0-CK0 4GB vs Mushkin 99[2/7/4]204F 4GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Mushkin 99[2/7/4]204F 4GB

需要考虑的原因
Mushkin 99[2/7/4]204F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

13.4 12.3

测试中的平均数值
更快的写入速度，GB/s

11.5 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Mushkin 99[2/7/4]204F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

12.3 13.4
写入速度，GB/s

8.9 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1789 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT16G4SFD824A.M16FJ 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston KHX2133C13S4/16G 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

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Kingston HP32D4S2S1ME-8 8GB