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AMD R5S38G1601U2S 8GB
Samsung M378A1G44AB0-CWE 8GB

AMD R5S38G1601U2S 8GB vs Samsung M378A1G44AB0-CWE 8GB

总分
star star star star star
AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异 规格 评论

差异

AMD R5S38G1601U2S 8GB 需要考虑的原因
AMD R5S38G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 3% 更低的延时
Samsung M378A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
AMD R5S38G1601U2S 8GB
Samsung M378A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 38
  • 读取速度，GB/s
    15.4 left arrow 16.5
  • 写入速度，GB/s
    9.2 left arrow 10.9
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 2829

AMD R5S38G1601U2S 8GB RAM的比较

Kingston KHX1866C9D3/8GX 8GB
AMD R538G1601U2S 8GB

Samsung M378A1G44AB0-CWE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
SK Hynix HMA82GU6CJR8N-XN 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905678-005.A00G 8GB
Kingston 9905678-005.A00G 8GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Corsair CMT32GX4M2E3200C16 16GB
Corsair CMT32GX4M2E3200C16 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
V-Color Technology Inc. TL48G24S815RGB 8GB
V-Color Technology Inc. TL48G24S815RGB 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Corsair CMK64GX4M8B3200C16 8GB
Corsair CMK64GX4M8B3200C16 8GB
内存RAM
Elpida EBJ41UF8BCS0-DJ-F 4GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905700-053.A00G 8GB
Kingston 9905700-053.A00G 8GB
内存RAM
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Corsair CMW32GX4M2Z3600C18 16GB
Corsair CMW32GX4M2Z3600C18 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM