AMD R5S38G1601U2S 8GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 -61% 更低的延时
更快的读取速度，GB/s

19.6 15.4

测试中的平均数值
更快的写入速度，GB/s

18.8 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 23
读取速度，GB/s

15.4 19.6
写入速度，GB/s

9.2 18.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2581 4095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B1G73DB0-CK0 8GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Corsair CMK128GX4M4A2400C16 32GB

Corsair CMK128GX4M4A2400C16 32GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CM4B16G7L2666A16K2-O 16GB

Corsair CM4B16G7L2666A16K2-O 16GB

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Apacer Technology 78.C1GM3.C7Z0C 8GB

Apacer Technology 78.C1GM3.C7Z0C 8GB