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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
36
左右 -6% 更低的延时
更快的读取速度,GB/s
17.3
14.9
测试中的平均数值
更快的写入速度,GB/s
14.5
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
34
读取速度,GB/s
14.9
17.3
写入速度,GB/s
9.5
14.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2292
3606
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
Kingston 9905402-592.A00LF 4GB
SK Hynix Kingston 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M391B5673EH1-CH9 2GB
Corsair CMK32GX4M2D3200C16 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMD16GX4M2B3866C18 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2133C15-8GIS 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Kingston 9905624-045.A00G 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M393A2K40CB1-CRC 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-4000C19-4GVK 4GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Kingston KF552C40-16 16GB
Gloway International (HK) STK4U2400D17081C 8GB
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMK32GX4M2D3600C16 16GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMR16GX4M2F4000C19 8GB
报告一个错误
×
Bug description
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