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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905402-592.A00LF 4GB
比较
Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Kingston 9905402-592.A00LF 4GB
总分
Nanya Technology M2X4G64CB8HG9N-DG 4GB
总分
Kingston 9905402-592.A00LF 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB
报告一个错误
更快的读取速度,GB/s
14.9
12.1
测试中的平均数值
更快的写入速度,GB/s
9.5
6.3
测试中的平均数值
更高的内存带宽,mbps
12800
10600
左右 1.21% 更高的带宽
需要考虑的原因
Kingston 9905402-592.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
36
左右 -38% 更低的延时
规格
完整的技术规格清单
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905402-592.A00LF 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
36
26
读取速度,GB/s
14.9
12.1
写入速度,GB/s
9.5
6.3
内存带宽,mbps
12800
10600
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
2292
1999
Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM的比较
SK Hynix Kingston 4GB
Kingston 9905402-592.A00LF 4GB RAM的比较
G Skill Intl F4-3200C14-32GTZR 32GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shenzhen Xingmem Technology Corp 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology J641GU42J5213ND 8GB
Kingston 9905471-006.A01LF 4GB
Kingston KVR800D2S6/4G 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston CBD24D4U7S8MA-8 8GB
Kingston 9905428-051.A00LF 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-16GTZSW 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M2C3200C14M 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Samsung M393B2G70BH0-CH9 16GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905622-025.A01G 4GB
报告一个错误
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Bug description
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