AMD R5S38G1601U2S 8GB vs Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

更快的读取速度，GB/s

15.4 14.7

测试中的平均数值

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的写入速度，GB/s

10.2 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

15.4 14.7
写入速度，GB/s

9.2 10.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2581 2764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Neo Forza NMUD480E82-3600 8GB

Neo Forza NMUD480E82-3600 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB