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Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT4G4DFS824A.M8FE 4GB

Apacer Technology AQD-D4U8GN24-SE 8GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB

总分
star star star star star
Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

总分
star star star star star
Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

差异 规格 评论

差异

Apacer Technology AQD-D4U8GN24-SE 8GB 需要考虑的原因
Apacer Technology AQD-D4U8GN24-SE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 24
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 6.6
    测试中的平均数值
Crucial Technology CT4G4DFS824A.M8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FE 4GB
报告一个错误

规格

完整的技术规格清单
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 24
  • 读取速度，GB/s
    17.5 left arrow 12.0
  • 写入速度，GB/s
    13.4 left arrow 6.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3041 left arrow 1433

Apacer Technology AQD-D4U8GN24-SE 8GB RAM的比较

A-DATA Technology AD5U480016G-B 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

Crucial Technology CT4G4DFS824A.M8FE 4GB RAM的比较

Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M393A1G40DB1-CRC 8GB
Samsung M393A1G40DB1-CRC 8GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
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内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
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Team Group Inc. UD5-6400 16GB
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SK Hynix HMA82GR7AFR8N-VK 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston KHX3200C16D4/4GX 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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内存RAM
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Samsung M378B5173BH0-CH9 4GB
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Kingston 9905622-058.A00G 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-4266C19-8GTZA 8GB
G Skill Intl F4-4266C19-8GTZA 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
内存RAM