Asgard VMA45UG-MEC1U2AW1 8GB vs Corsair CMWX8GD3200C16W2E 8GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Corsair CMWX8GD3200C16W2E 8GB

Corsair CMWX8GD3200C16W2E 8GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Corsair CMWX8GD3200C16W2E 8GB

需要考虑的原因
Corsair CMWX8GD3200C16W2E 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 47

左右 -52% 更低的延时
更快的读取速度，GB/s

15.1 11.8

测试中的平均数值
更快的写入速度，GB/s

13.5 9.2

测试中的平均数值

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Corsair CMWX8GD3200C16W2E 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 31
读取速度，GB/s

11.8 15.1
写入速度，GB/s

9.2 13.5
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2323 3095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C15-16GRKD 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

Samsung M378A1G43DB0-CPB 8GB

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Corsair CMK64GX4M2C3200C16 32GB

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Samsung M471B5173QH0-YK0 4GB

Corsair CM4S16GL3200K18K2 16GB

Corsair CM4S16GL3200K18K2 16GB