Asgard VMA45UG-MEC1U2AW1 8GB vs Micron Technology 8ATF1G64AZ-2G6H1 8GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G6H1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6H1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 47

左右 -38% 更低的延时
更快的读取速度，GB/s

16.2 11.8

测试中的平均数值
更快的写入速度，GB/s

13.1 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 34
读取速度，GB/s

11.8 16.2
写入速度，GB/s

9.2 13.1
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2323 3020

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT8G4SFS832A.C8FP 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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