SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Samsung M386A4G40DM0-CPB 32GB

总分

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

总分

Samsung M386A4G40DM0-CPB 32GB

Samsung M386A4G40DM0-CPB 32GB

差异规格评论

差异

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

报告一个错误

低于PassMark测试中的延时，ns

46 55

左右 16% 更低的延时
更快的读取速度，GB/s

14.2 9.4

测试中的平均数值
更快的写入速度，GB/s

13.6 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Samsung M386A4G40DM0-CPB 32GB

需要考虑的原因
Samsung M386A4G40DM0-CPB 32GB

报告一个错误

规格

完整的技术规格清单

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M386A4G40DM0-CPB 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 55
读取速度，GB/s

14.2 9.4
写入速度，GB/s

13.6 7.2
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2717 2117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston KTC1G-UDIMM 1GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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Samsung 1600 CL10 Series 8GB

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