RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Avant Technology F641GU67F9333G 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB

Avant Technology F641GU67F9333G 8GB vs Chun Well Technology Holding Limited D4U1636181DC 16GB

总分
star star star star star
Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

总分
star star star star star
Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

差异 规格 评论

差异

Avant Technology F641GU67F9333G 8GB 需要考虑的原因
Avant Technology F641GU67F9333G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 36
    左右 22% 更低的延时
Chun Well Technology Holding Limited D4U1636181DC 16GB 需要考虑的原因
Chun Well Technology Holding Limited D4U1636181DC 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.3 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Avant Technology F641GU67F9333G 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 36
  • 读取速度，GB/s
    11.1 left arrow 17.3
  • 写入速度，GB/s
    6.5 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2113 left arrow 3169

Avant Technology F641GU67F9333G 8GB RAM的比较

Mushkin 992018 (997018) 8GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingston 99U5665-001.A00G 4GB
Kingston 99U5665-001.A00G 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3600C17-16GTZKK 16GB
G Skill Intl F4-3600C17-16GTZKK 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4B8G1J2400A16K2-O 8GB
Corsair CM4B8G1J2400A16K2-O 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK64GX4M2A2666C16 32GB
Corsair CMK64GX4M2A2666C16 32GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9965589-035.D00G 16GB
Kingston 9965589-035.D00G 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Kingston ACR16D3LU1MNG/4G 4GB
Kingston ACR16D3LU1MNG/4G 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM