Samsung M378B5673FH0-CH9 2GB vs Corsair CMSX16GX4M1A2666C18 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Corsair CMSX16GX4M1A2666C18 16GB

需要考虑的原因
Corsair CMSX16GX4M1A2666C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 35

左右 -3% 更低的延时
更快的读取速度，GB/s

15.6 14.4

测试中的平均数值
更快的写入速度，GB/s

13.1 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Corsair CMSX16GX4M1A2666C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 34
读取速度，GB/s

14.4 15.6
写入速度，GB/s

9.5 13.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 3043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-004.A00LF 4GB

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Crucial Technology CT16G4SFD8266.16FE1 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

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Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Corsair CMK32GX4M4E4133C19 8GB

Corsair CMK32GX4M4E4133C19 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMK32GX4M2D3200C16 16GB

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Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB